To gain a better understanding of the role of the PNIPAM dielectric, OTFTs incorporating SiO2 and PMMA as dielectric materials were also fabricated for comparison. As displayed in Supplementary Fig. S3, the fabricated devices containing SiO2 and PMMA as dielectrics also exhibited increases in the values of IDS and shifts in the values of Vth, but they were not as significant as those observed for the OTFT incorporating the PNIPAM dielectric. In the case of SiO2, the value of IDS increased from an initial current of –9.15 µA to a final current of –10.0 µA upon heating from 30 to 45 °C. A similar trend was observed for the OTFT incorporating the PMMA dielectric: here, the value of IDS increased correspondingly from –3.97 to –4.32 µA.