The responses of the OTFT devices to temperature were investigated by measuring their output and transfer characteristics over the temperature range from 30 to 45 °C. Fig. 3a reveals that the values of IDS increased upon increasing the temperature, from an initial value of –5.7 µA at 30 °C to a final value of –9.8 µA at 45 °C. This inclination was presumably associated with a threshold voltage that shifted to a more positive value upon increasing the temperature, as displayed in Fig. 3b. The value of Vth shifted from –16.2 to –9.9 V, as the temperature increased from 30 to 45 °C. Because of the limitations of the equipment used, the lowest applicable increment in temperature was 0.5 °C (Supplementary Fig. S1). To investigate the sensitivity of the OTFT toward the temperature, the electrical performance was measured after varying the temperature; the data are summarized in Figs. 3c and 3d.